The Numerical Analysis of Fourier Spectral Method for the Epitaxial Growth Mode of Thin Films 关于薄膜外延生长模型Fourier谱方法的数值分析
A study of RHEED pattern from the epitaxial growth of Si-Ge crystal 在Si-Ge晶体外延生长中的RHEED花样研究
Research Interests: Surface science; Semi-conductor physics, Scanning tunneling microscopy, Surface atomic and molecular dynamics; Mechanism of epitaxial growth. 研究兴趣:表面科学、导体物理、描穿隧显微术、面原子、子动态学、晶成长机制。
Epitaxial growth of cerium oxide nano particle and thin film on nickel substrates 镍基带上取向生长纳米二氧化铈颗粒及薄膜
Epitaxial Growth and Structure Characterization of SiC Film and Fabrication of Graphene 碳化硅薄膜的外延生长、结构表征及石墨烯的制备
Density Functional Theory Study of Diamond Epitaxial Growth on Copper 铜基底上外延生长金刚石薄膜的密度泛函理论研究
Variation methods of in-situ real time optical monitoring of thin film layer-by-layer epitaxial growth are presented. 综述了几种用于监控薄膜外延生长的光学原位实时监测方法的进展。
Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In_ ( 0.2) Ga_ ( 0.8) As 衬底温度和生长速率对In(0.2)Ga(0.8)As分子束外延薄膜生长影响
Room Temperature Epitaxial Growth of ZnO Thin Film on Sapphire Substrates by RF Magnetron Sputtering 蓝宝石衬底上磁控溅射法室温制备外延ZnO薄膜
In addition, the ALH84001 magnetites exhibit epitaxial growth relationships with the host carbonate, and are therefore unlikely to have formed within the cells of bacteria ( Bradley et al. 1998). 此外,84001磁铁矿显示的外延生长特点与大量碳酸盐有关,因此,与细菌细胞内部形成的也可能有所不同。
Epitaxial growth of nano hydroxyapatite rods under hydrothermal condition 水热条件下纳米羟基磷灰石的取向有序生长
Epitaxial Growth of ZnO Films and the Form of the Twin Domains ZnO外延薄膜的制备及孪晶的形成
BST thin films sol gel technique epitaxial growth electrical properties. 标签薄膜溶胶-凝胶工艺外延生长电性能。
Influence of Moving Speed on Epitaxial Growth of Y_2O_3 Buffer Layer 走带速率对Y2O3隔离层生长的影响
The results obtained may be useful in understanding the migration effect of silicon in the epitaxial growth. 所得结果可以用于认识硅外延生长过程中的硅迁移效应。
The hetero epitaxial growth of GaSb on GaAs substrates by molecular beam epitaxy ( MBE) was investigated. 研究了用分子束外延(MBE)在GaAs衬底上生长GaSb薄膜的工艺。
The properties of Si epitaxial layer are investigated by XRD, XTEM and spreading resistance techniques. The results show that Si epitaxial growth layer is of good crystallinity and the same orientation with Si substrate and porous silicon layer. 对获得的外延层作了XRD、XTEM和扩展电阻等测量,测量结果表明硅外延层单晶性好,并和硅衬底、多孔硅层具有相同的晶向。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible. 现代先进的外延技术使应变层锗硅材料的应用成为可能。
According to experiment phenomena and test result, the influence of silicon carbon powder and pivotal experiment parameter on epitaxial growth is analyzed. 根据观察到的实验现象和测试结果,分析了碳化硅粉和实验关键参数对外延生长的影响。
The epitaxial growth of TiC was found at the interface of undissolved TiC particles with γ-Ni matrix. 未熔TiC颗粒与基体γ-Ni之间具有外延生长的结合界面,液析TiC与基体γ-Ni结合界面干净、光滑。
In this work, SEM and XRD were performed and the epitaxial growth mechanism was studied as well. 本研究对上述结果作了SEM及XRD等表征,并对外延生长机理进行了探讨。
A Dynamics Study of Surface Atoms Course During Film Epitaxial Growth 薄膜外延生长中表面原子过程的动力学研究
Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph. 从外延形貌照片中观察到了外延生长台及生长螺线。
The epitaxial growth is not found between ( Ti, Al) N coating and substrate. (Ti,Al)N涂层在硬质合金基体上无外延生长;
Epitaxial growth mechanism of YBCO films on Ag single crystals 单晶Ag基底上YBCO膜外延机理的研究
Study of transition metal silicides thin film epitaxial growth on silicon substrate 硅基底上外延生长过渡金属硅化物薄膜的研究
In the process of the whole epitaxial growth, the samples keep morphology of sphere. 整个外延生长过程中,BN纳米绒球一直保持球形形貌。
The epitaxial growth of GaN on Si substrate has made much progress in recent years. 近几年来,在Si衬底上生长GaN取得了很大的进展。
The results show that the epitaxial growth was very sensitive to the oxygen content in the chamber. 实验结果表明,外延生长对腔体中的氧含量非常敏感。
A method has been developed for controlled epitaxial growth on cubic nanocrystals by selectively activating their surface via etching. 我们开发了一种方法,通过刻蚀法对纳米立方体的表面进行选择性活化,进而很好控制其外延生长。